CPH5821 no.7701-1/5 sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn7701 CPH5821 mosfet : p-channel silicon mosfet sbd : schottky barrier diode general-purpose switching device applications features ? dc / dc converter applications. ? composite type with a p-channel sillicon mosfet (mch3312) and a schottky barrier diode (sbs004) contained in one package facilitating high-density mounting. [mosfet] ? 4v drive. [sbd] ? short reverse recovery time. ? low forward voltage. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit [mosfet] drain-to-source voltage v dss --30 v gate-to-source voltage v gss 20 v drain current (dc) i d -- 2 a drain current (pulse) i dp pw 10 m s, duty cycle 1% --8 a allowable power dissipation p d mounted on a ceramic board (600mm 2 5 0.8mm) 1unit 0.9 w channel temperature tch 150 c storage temperature tstg --55 to +125 c [sbd] repetitive peak reverse voltage v rrm 15 v nonrepetitive peak reverse surge voltage v rsm 15 v average output current i o 1a surge forward current i fsm 50hz sine wave, 1 cycle 10 a junction temperature tj --55 to +125 c storage temperature tstg --55 to +125 c marking : qx any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. 61504 ts im ta-100874
CPH5821 no.7701-2/5 electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit [mosfet] drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0 --30 v zero-gate voltage drain current i dss v ds =--30v, v gs =0 --1 m a gate-to-source leakage current i gss v gss = 16v, v ds =0 10 m a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --1.2 --2.6 v forward transfer admittance ? yfs ? v ds =--10v, i d =--1a 1.2 2.0 s r ds (on)1 i d =--1a, v gs =--10v 110 145 m w static drain-to-source on-state resistance r ds (on)2 i d =--500ma, v gs =--4v 205 290 m w input capacitance ciss v ds =--10v, f=1mhz 200 pf output capacitance coss v ds =--10v, f=1mhz 47 pf reverse transfer capacitance crss v ds =--10v, f=1mhz 32 pf turn-on delay time t d (on) see specified test circuit 7.2 ns rise time t r see specified test circuit 2.9 ns turn-off delay time t d (off) see specified test circuit 21 ns fall time t f see specified test circuit 8.7 ns total gate charge qg v ds =--10v, v gs =--10v, i d =--2a 5.5 nc gate-to-source charge qgs v ds =--10v, v gs =--10v, i d =--2a 0.98 nc gate-to-drain miller charge qgd v ds =--10v, v gs =--10v, i d =--2a 0.82 nc diode forward voltage v sd i s =--2a, v gs =0 --0.85 --1.5 v [sbd] reverse voltage v r i r =1ma 15 v forward voltage v f 1i f =0.5a 0.30 0.35 v v f 2i f =1a 0.35 0.40 v reverse current i r v r =6v 500 m a interterminal capacitance c v r =10v, f=1mhz, 1 cycle 42 pf reverse recovery time t rr i f =i r =100ma, see specified test circuit. 15 ns package dimensions electrical connection unit : mm 2171 543 12 1 : cathode 2 : drain 3 : gate 4 : source 5 : anode top view 1.6 0.6 0.6 2.8 0.2 2.9 0.05 0.4 0.95 0.2 0.9 0.7 0.15 0.4 12 3 4 5 1 : cathode 2 : drain 3 : gate 4 : source 5 : anode sanyo : cph5
CPH5821 no.7701-3/5 switching time test circuit trr test circuit [mosfet] [sbd] pw=10 m s d.c. 1% p. g 50 w g s d i d = --1a r l =15 w v dd = --15v v out CPH5821 (mosfet) v in 0v --10v v in duty 10% 50 100 10 --5v t rr 100ma 100ma 10ma 10 s --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 --60 --40 --20 0 20 40 60 80 100 120 140 160 0 --2 --4 --6 --8 --12 --14 --16 --10 --18 --20 it03214 0 0 --0.4 --0.8 --1.6 --2.0 --0.2 --1.2 0 50 100 150 200 250 300 350 400 0 --0.4 --0.6 --0.8 --1.0 --0.1 --0.3 --0.5 --0.7 --0.9 v gs = --3.0v --3.5v --4.0v --6.0v --10.0v it03212 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 v ds =10v 25 c --25 c ta=75 c it03213 it03215 50 100 150 200 250 300 350 400 0 ta=25 c --1.0a i d = --0.5a i d = --1.0a, v gs = --10v i d = --0.5a, v gs = --4v it03216 --0.01 --0.1 23 57 23 57 23 57 --1.0 --10 10 1.0 7 5 3 2 0.1 7 5 3 2 v ds =10v 75 c 25 c ta= --25 c it03217 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2 --0.01 --0.1 --10 --1.0 7 5 3 2 7 5 3 2 7 5 3 2 v gs =0 --25 c 25 c ta=75 c r ds (on) -- v gs i d -- v ds i d -- v gs r ds (on) -- ta ? y fs ? -- i d i f -- v sd [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] static drain-to-source on-state resistance, r ds (on) -- m w gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a ambient temperature, ta -- c drain current, i d -- a forward transfer admittance, ? y fs ? -- s diode forward voltage, v sd -- v forward current, i f -- a static drain-to-source on-state resistance, r ds (on) -- m w
CPH5821 no.7701-4/5 01234 6 5 0 -- 1 -- 2 -- 3 -- 4 -- 5 -- 6 -- 7 -- 8 -- 9 --10 v ds = --10v i d = --2a it03220 0 0 20 40 0.2 0.4 0.6 0.8 0.9 1.0 60 80 100 120 140 160 it06772 a s o 2 3 5 7 2 3 5 7 2 3 5 7 --10 --1.0 --0.1 --0.01 --0.1 23 57 --1.0 --0.01 23 57 23 57 7 --10 23 5 --100 it06771 i dp = --8a i d = --2a operation in this area is limited by r ds (on). 100 m s 100ms dc operation 1ms 10ms 10 m s 0 100 10 1.0 0.1 0.01 5 7 3 2 5 7 3 2 5 7 3 2 5 7 3 2 15 510 0 0.1 0.01 0.3 0.4 0.5 0.1 0.2 1.0 3 2 7 5 3 2 7 5 3 2 ta=125 c 25 c 75 c 100 c ta=125 c 25 c 50 c 75 c 100 c it00622 it00623 --0.1 --1.0 23 57 23 5 7 5 3 2 2 10 100 7 5 3 2 1.0 sw time -- i d v dd = -- 15v v gs = --10 v t d (on) t d (off) t r t f it03218 ciss, coss, crss -- v ds 0 --5 --10 --15 --20 --25 --30 10 100 3 2 7 5 3 2 ciss, coss, crss -- pf f=1mhz ciss coss crss it03219 50 c [mosfet] [mosfet] [mosfet] p d -- ta total gate charge, qg -- nc gate-to-source voltage, v gs -- v ambient temperature, ta -- c allowable power dissipation, p d -- w drain-to-source voltage, v ds -- v drain current, i d -- a v gs -- qg ta=25 c single pulse mounted on a ceramic board (600mm 2 5 0.8mm) 1unit mounted on a ceramic board (600mm 2 5 0.8mm) 1unit [sbd] [sbd] i r -- v r i f -- v f reverse voltage, v r -- v reverse current, i r -- ma forward voltage, v f -- v forward current, i f -- a [mosfet] [mosfet] drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v
CPH5821 no.7701-5/5 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of june, 2004. specifications and information herein are subject to change without notice. ps is 20ms t 7 0.01 23 7 0.1 0 52 2 37 1.0 5 12 10 8 6 4 2 3 it00626 180 360 q 360 (2) (4) (3) (1) 1.0 10 2 2 3 5 100 10 2 3 5 7 357 2 f=1mhz 0 0 0.2 0.4 0.6 0.8 0.7 0.6 0.4 0.3 0.2 0.1 0.5 1.0 1.2 1.4 it00624 it00625 i fsm -- t [sbd] time, t -- s surge forward current, i fsm (peak) -- a current waveform 50hz sine wave [sbd] [sbd] c -- v r p f(av) -- i o (1) rectangular wave q =60 (2) rectangular wave q =120 (3) rectangular wave q =180 (4) sine wave q =180 reverse voltage, v r -- v interterminal capacitance, c -- pf average forward current, i o -- a average forward power dissipation, p f (av) -- w rectangular wave sine wave
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